? 2000 ixys all rights reserved 98739 (8/00) symbol test conditions maximum ratings v dss t j = 25 c to 150 c 100 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 100 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c80a i l(rms) lead current limit 75 a i dm t c = 25 c, pulse width limited by t jm 320 a i ar t c = 25 c80a e ar t c = 25 c50mj e as 2.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 300 w t j -55 to +150 c t jm 150 c t stg -55 to +150 c t l 1.6 mm (0.063 in) from case for 10 s 300 c m d mounting torque 1.13/10 nm/lb.in. weight to-247 6 g to-268 4 g n-channel enhancement mode avalanche rated, high dv/dt preliminary data sheet features international standard packages low r ds (on) rated for unclamped inductive load switching (uis) molding epoxies meet ul 94 v-0 flammability classification advantages easy to mount space savings high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 1 ma 100 v v gs(th) v ds = v gs , i d = 4 ma 2.0 4.0 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss t j = 25 c50 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 0.5 i d25 12.5 m ? pulse test, t 300 s, duty cycle d 2 % to-247 ad (ixfh) g = gate d = drain s = source tab = drain hiperfet tm power mosfets to-268 ( ixft) case style (tab) g s v dss = 100 v i d25 = 80 a r ds(on) = 12.5 m ? ? ? ? ? t rr 200 ns ixfh 80n10 ixft 80n10 (tab) 4 .com u datasheet
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. ixfh 80n10 ixft 80n10 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 ? i d25 , pulse test 35 55 s c iss 4800 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1460 pf c rss 490 pf t d(on) 41 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 63 ns t d(off) r g = 2.5 ? (external), 90 n s t f 26 ns q g(on) 180 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 38 nc q gd 65 nc r thjc 0.42 k/w r thck (to-247) 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 80 a i sm repetitive; pulse width limited by t jm 320 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr 200 ns q rm i f = 25a, -di/dt = 100 a/ s, v r = 50 v 0.5 c i rm 6a to-268 outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 to-247 ad (ixfh) outline terminals: 1 - gate 2 - drain 3 - source tab - drain 4 .com u datasheet
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